High-Temperature Coefficient of Resistance in MoxW1−xS2 Thin Film

Despite the use of transition metal dichalcogenides being widespread in various applications, knowledge and applications MoxW1−xS2 compounds are relatively limited. In this study, we deposited a MoW alloy on Si substrate using sputter system. Consequently, successfully utilized furnace to sulfurize from 800 950 °C, which transferred into ternary compound. The Raman spectra samples indicated an additional hybridized peak at 375 cm−1 not present typical MoS2 WS2. With increasing sulfurization temperature, scanning electron microscopy images revealed surface morphology gradually becoming sheet-like structure. X-ray diffraction results showed that crystal structure tended toward preferable (002) orientation. I–V resistance increased when were sulfurized higher temperature due more porous structures generated within thin film. Furthermore, high-temperature coefficient for film °C was about −1.633%/K−1. This indicates its suitability thermal sensors.